Work

0.5 nm EOT low leakage ALD SrTiO3 on TiN MIM capacitors for DRAM applications

Year: 2008

Type: conference-paper

Source: Technical digest - International Electron Devices Meeting/Technical digest

DOI: 10.1109/iedm.2008.4796852

Institutions: IMEC, Ghent University, ASM International (Belgium)

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2003134957

FWCI: 1.895

Cites: 1

Cited by: 12

Related to: 10