Get started
Author

Małgorzata Pawlak

Observed names: M A Pawlak, M. A. Pawlak, M.A Pawlak, M.A. Pawlak, Malgorzata A. Pawlak, Malgorzata Anna Pawlak, Malgorzata Pawlak, Małgorzata PAWLAK
ORCID: 0000-0002-2519-9736
Observed ORCID: 0000-0002-2519-9736
OpenAlex ID: A5072042967
High-k dielectrics for future generation memory devices (Invited Paper)
2009 · J.A. Kittl, K. Opsomer, et al. · Microelectronic Engineering · 256
Work function of Ni silicide phases on HfSiON and SiO/sub 2/: NiSi, Ni/sub 2/Si, Ni/sub 31/Si/sub 12/, and Ni/sub 3/Si fully silicided gates
2005 · J.A. Kittl, M.A. Pawlak, et al. · IEEE Electron Device Letters · 70
Green segregated honeycomb biopolymer composites for electromagnetic interference shielding biomedical devices
2024 · Tong Liu, Huiyao Feng, et al. · Chemical Engineering Journal · 68
Ni based silicides for 45nm CMOS and beyond
2004 · Anne Lauwers, Jorge A. Kittl, et al. · Materials Science and Engineering B · 65
Composition influence on the physical and electrical properties of SrxTi1−xOy-based metal-insulator-metal capacitors prepared by atomic layer deposition using TiN bottom electrodes
2009 · N. Menou, M. Popovici, et al. · Journal of Applied Physics · 61
Ni fully silicided gates for 45nm CMOS applications
2005 · Jorge A. Kittl, Anne Lauwers, et al. · Microelectronic Engineering · 37
Impact of crystallization behavior of SrxTiyOz films on electrical properties of metal-insulator-metal capacitors with TiN electrodes
2010 · M. A. Pawlak, B. Kaczer, et al. · Applied Physics Letters · 31
Scalability of Ni FUSI gate processes: phase and Vt control to 30 nm gate lenghts
2005 · J.A. Kittl, A. Veloso, et al. · Symposium on VLSI Technology · 28
Impact of bottom electrode and SrxTiyOz film formation on physical and electrical properties of metal-insulator-metal capacitors
2011 · M. A. Pawlak, B. Kaczer, et al. · Applied Physics Letters · 25
Investigation of Ni fully silicided gates for sub-45 nm CMOS technologies
2004 · M.A. Pawlak, J.A. Kittl, et al. · Microelectronic Engineering · 24
Applications of Ni-based silicides to 45 nm CMOS and Beyond
2004 · Jorge A. Kittl, Anne Lauwers, et al. · MRS Proceedings · 24
Modulation of the workfunction of Ni fully silicided gates by doping: dielectric and silicide phase effects
2006 · M.A. Pawlak, A. Lauwers, et al. · IEEE Electron Device Letters · 23
A comparative study of the microstructure–dielectric properties of crystalline SrTiO3 ALD films obtained via seed layer approach
2011 · Mihaela Popovici, Kazuyuki Tomida, et al. · physica status solidi (a) · 21
Controlled growth of rutile TiO2by atomic layer deposition on oxidized ruthenium
2010 · Mihaela Popovici, Johan Swerts, et al. · physica status solidi (RRL) - Rapid Research Letters · 21
CMOS Integration of Dual Work Function Phase-Controlled Ni Fully Silicided Gates (NMOS:NiSi, PMOS:$\hbox{Ni}_{2}\hbox{Si}$, and $\hbox{Ni}_{31}\hbox{Si}_{12}$) on HfSiON
2006 · J. A. Kittl, A. Lauwers, et al. · IEEE Electron Device Letters · 21
CMOS integration of dual work function phase controlled Ni FUSI with simultaneous silicidation of NMOS (NiSi) and PMOS (Ni-rich silicide) gates on HfSiON
2006 · A. Lauwers, A. Veloso, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 17
Direct physical evidence of mechanisms of leakage and equivalent oxide thickness reduction in metal-insulator-metal capacitors based on RuOx/TiOx/SrxTiyOz/TiN stacks
2012 · M. A. Pawlak, J. Swerts, et al. · Applied Physics Letters · 16
Atomic Layer Deposition of Ru and RuO2 for MIMCAP Applications
2009 · Chao Zhao, Malgorzata Pawlak, et al. · ECS Transactions · 15
PDF
Linewidth effect and phase control in Ni fully silicided gates
2006 · J.A. Kittl, A. Lauwers, et al. · IEEE Electron Device Letters · 15
Kinetics of Ni3Si2 formation in the Ni2Si–NiSi thin film reaction from in situ measurements
2007 · J. A. Kittl, M. A. Pawlak, et al. · Applied Physics Letters · 14
Seed Layer and Multistack Approaches to Reduce Leakage in SrTiO3-Based Metal–Insulator–Metal Capacitors Using TiN Bottom Electrode
2010 · Nicolas Menou, Mihaela Popovici, et al. · Japanese Journal of Applied Physics · 13
Emission of selected exhaust compounds in jet engines of a jet aircraft in cruise phase
2018 · Małgorzata PAWLAK, Andrzej MAJKA, et al. · Silniki Spalinowe/Combustion Engines · 12
PDF
(Invited) Plasma Enhanced Atomic Layer Deposited Ruthenium for MIMCAP Applications
2011 · Johan Swerts, M.M. Salimullah, et al. · ECS Transactions · 12
PDF
High-k Dielectrics and Metal Gates for Future Generation Memory Devices
2009 · Jorge A. Kittl, Karl Opsomer, et al. · ECS Transactions · 12
PDF
0.5 nm EOT low leakage ALD SrTiO3 on TiN MIM capacitors for DRAM applications
2008 · N. Menou, X.P. Wang, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 12
Works count: 49
Citation count: 1,019
H-index: 16
I10-index: 31
Year
Topic
Type