CMOS Integration of Dual Work Function Phase-Controlled Ni Fully Silicided Gates (NMOS:NiSi, PMOS:$\hbox{Ni}_{2}\hbox{Si}$, and $\hbox{Ni}_{31}\hbox{Si}_{12}$) on HfSiON
Year: 2006
Type: article
Source: IEEE Electron Device Letters
Institutions: IMEC, Philips (Belgium)
Language: English
Field: Materials Science
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2054593799
