Work

Ni fully silicided gates for 45nm CMOS applications

Year: 2005

Type: article

Source: Microelectronic Engineering

DOI: 10.1016/j.mee.2005.07.084

Authors: Jorge A. Kittl, Anne Lauwers, Malgorzata A. Pawlak, Mark J.H. van Dal, Anabela Veloso, K.G. Anil, Geoffrey Pourtois, Caroline Demeurisse, Tom Schram, Bert Brijs, Muriel de Potter, Christa Vrancken, Karen Maex

Institution: IMEC

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2087488347

FWCI: 3.606

Cites: 5

Cited by: 37

Related to: 10