Year: 2009
Type: conference-paper
Abstract: The requirements and development of high-k dielectric films for application in storage cells of future generation flash and Dynamic Random Access Memory (DRAM) devices are reviewed. Dielectrics with k-value in the 9-30 range are studied as insulators between charge storage layers and control gates in flash devices. For this application, large band gaps (> 6 eV) and band offsets are required, as well as low trap densities. Materials studied include aluminates and scandates. For DRAM metal-insulator-metal (MIM) capacitors, aggressive scaling of the equivalent oxide thickness (with targets down to 0.3 nm) drives the research towards dielectrics with k-values > 50. Due to the high aspect ratio of MIMCap structures, highly conformal deposition techniques are needed, triggering a substantial effort to develop Atomic Layer Deposition (ALD) processes for the deposition of metal gates and high-k dielectrics. Materials studied include Sr and Ba-based perovskites, with SrTiO3 as one of the most promising candidates, as well as tantalates, titanates and niobates.
Source: ECS Transactions
DOI: 10.1149/1.3118928
Authors: Jorge A. Kittl, Karl Opsomer, M Popovici, N. Menou, Ben Kaczer, X. P. Wang, C. Adelmann, M. A. Pawlak, K. Tomida, Aude Rothschild, Bogdan Govoreanu, R. Degraeve, M. Schaekers, M Zahid, A. Delabie, J. Meersschaut, W. Polspoel, Sergiu Clima, Geoffrey Pourtois, W. Knaepen, Christophe Detavernier, Valery Afanas'ev, T. Blomberg, D. Pierreux, J. Swerts, P. Fischer, J. W. Maes, D. Manger, Wilfried Vandervorst, T. Conrad, A. Franquet, P. Favia, Hugo Bender, B. Brijs, S. Van Elshocht, Malgorzata Jurczak, J. Van Houdt, Dirk J. Wouters
Institutions: IMEC, Ghent University, KU Leuven, ASM International (Belgium)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W2067831719