Work

Surface Processes in ALE and MBE Growth of ZnSe: Correlation of RHEED Intensity Variation with Surface Coverage

Year: 1989

Type: article

Abstract: The surface processes in ALE (atomic layer epitaxy) and MBE (molecular beam epitaxy) are investigated both by numerical calculation for the surface coverage based on the model proposed by the authors and by in situ observation of the RHEED intensity variation. The sublimation process is dominated by the Se sublimation from the surface and the adsorption process is influenced by the desorption of Se from both the surface and the precursor states in the range of practical ALE and MBE growth temperatures. To achieve the layer-by-layer growth during ALE the substrate temperature should be set below 300°C. It is also shown that the RHEED intensity variation corresponds to the change in surface coverage during ALE and MBE growth as determined via comparison of the model calculation for surface coverage with the experimental RHEED data.

Source: Japanese Journal of Applied Physics

DOI: 10.1143/jjap.28.1659

Authors: Ziqiang Zhu, Minoru Hagino, Katsuhiro Uesugi, Satomi Kamiyama, Masami Fujimoto, Takafumi Yao

Institutions: Shizuoka University, Research Institute of Electronics, Shizuoka University

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: bronze

OpenAlex ID: W2003262838

FWCI: 3.69

Cites: 7

Cited by: 15

Related to: 10