Author

Satomi KAMIYAMA

Observed names: S. Kamiyama, Satomi Kamiyama

Institution: Semiconductor Leading Edge Technologies, Inc (Japan)

Observed institutions: Tokai University, Semiconductor Leading Edge Technologies, Inc (Japan)

OpenAlex ID: A5059808554

Molecular beam epitaxy/atomic layer epitaxy growth processes of wide-band-gap II–VI compounds: Characterization of surface stoichiometry by reflection high-energy electron diffraction

1990 · T. Yao, Z. Q. Zhu, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 27

Surface Processes in ALE and MBE Growth of ZnSe: Correlation of RHEED Intensity Variation with Surface Coverage

1989 · Ziqiang Zhu, Minoru Hagino, et al. · Japanese Journal of Applied Physics · 15

Surface processes in ALE and MBE growth of ZnSe: Adsorption and sublimation processes

1990 · Ziqiang Zhu, Minoru Hagino, et al. · Journal of Crystal Growth · 7

Effect of Post Cap-Layer Deposition Annealing Temperature and TiN Thickness on SMDH CMOS Process using TiN Hard Mask

2009 · H. Shinohara, A. Katakami, et al. · International Conference on Solid State Devices and Materials (SSDM) · 1

Reflection high-energy electron diffraction study of the heterointerface formation of ZnSe/ZnTe

1995 · T. Yao, M. Fujimoto, et al. · Journal of Crystal Growth · 1

Observation of ALE growth process of ZnTe by RHEED.

1989 · Satomi KAMIYAMA, Katsuhiro UESUGI, et al. · Hyomen Kagaku

Determination of two dimensional growth conditions for Zn chalcogenides by the observation of RHEED intensity oscillation.

1989 · Katsuhiro UESUGI, Satomi KAMIYAMA, et al. · Hyomen Kagaku

Evaluation of surface stoichiometry of Zn-chalcogenides by RHEED intensity oscillation.

1989 · Masami FUJIMOTO, Katsuhiro UESUGI, et al. · Hyomen Kagaku

MBE and ALE of II-VI Compounds: Growth Processes and Lattice Strain in Heteroepitaxy

1989 · T. Yao, M. Fujimoto, et al. · NATO ASI series. Series B : Physics

Works count: 9

Citation count: 51

H-index: 3

I10-index: 2