Work

Effect of Post Cap-Layer Deposition Annealing Temperature and TiN Thickness on SMDH CMOS Process using TiN Hard Mask

Year: 2009

Type: conference-paper

Source: International Conference on Solid State Devices and Materials (SSDM)

DOI: 10.7567/ssdm.2009.b-5-2

Authors: H. Shinohara, A. Katakami, T. Watanabe, M. Hayashi, S. Kamiyama, Y. Sugita, T. Matsuki, T. Eimori, J. Yugami, K. Ikeda, Y. Ohji

Institution: Semiconductor Leading Edge Technologies, Inc (Japan)

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2469819986

FWCI: 0.468

Cites:

Cited by: 1

Related to: 10