Work

FinFET Performance Enhancement with Tensile Metal Gates and Strained Silicon on Insulator (sSOI) Substrate

Year: 2006

Type: conference-paper

Source: Conference digest

DOI: 10.1109/drc.2006.305109

Authors: Weize Xiong, Kyoungsub Shin, C. Cleavelin, Thomas Schulz, Klaus Schruefer, I. Cayrefourcq, M. Kennard, C. Mazure, Paul Patruno, Tsu-jae Liu

Institutions: Texas Instruments (United States), University of California, Berkeley, Infineon Technologies (Germany), Soitec (France), Synopsys (United States)

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2003275680

FWCI: 4.22

Cites: 1

Cited by: 12

Related to: 10