Work

Carrier activation in in situ Si-doped GaAs layers fabricated by a focused Si ion beam and molecular beam epitaxy combined system

Year: 2001

Type: article

Source: Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms

DOI: 10.1016/s0168-583x(00)00547-4

Authors: Takuo Hada, Hirotaka Miyamoto, Junichi Yanagisawa, Fujio Wakaya, Yoshihiko Yuba, Kenji Gamo

Institution: The University of Osaka

Language: English

Topic: Ion-surface interactions and analysis

Subfield: Surfaces, Coatings and Films

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: Ministry of Education, Culture, Sports, Science and Technology, Murata Science Foundation

OpenAlex ID: W2003673696

FWCI:

Cites: 8

Cited by: 6

Related to: 10