Work

Study of the Etching Mechanism of Heavily Doped Si in HF

Year: 2012

Type: article

Source: Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena

DOI: 10.4028/www.scientific.net/ssp.187.41

Authors: Nick Valckx, Daniel Cuypers, Rita Vos, Harold Philipsen, Jens Rip, Geert Doumen, Paul W. Mertens, Marc M. Heyns, Stefan De Gendt

Institutions: IMEC, KU Leuven

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2005097656

FWCI: 0.6

Cites: 5

Cited by: 5

Related to: 10