Work

Material optimisation for AlGaN/GaN HFET applications

Year: 2001

Type: article

Source: Journal of Crystal Growth

DOI: 10.1016/s0022-0248(01)01303-3

Authors: Z. Bougrioua, I. Moerman, N. Sharma, R.H. Wallis, J. Cheyns, K. Jacobs, E.J. Thrush, L. Considine, R. Beanland, J.-L. Farvacque, C. Humphreys

Institutions: Ghent University, University of Cambridge, Thomas Swan (United Kingdom), Université de Lille

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: green

OpenAlex ID: W2005348153

FWCI: 2.486

Cites: 18

Cited by: 32

Related to: 10