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Edward J. Thrush

Observed names: E J Thrush, E J. Thrush, E. J. THRUSH, E. J. Thrush, E.J Thrush, E.J. Thrush, THRUSH, EJ, Thrush, E. J., Thrush, E.J.
OpenAlex ID: A5000288516
Optical and microstructural studies of InGaN∕GaN single-quantum-well structures
2005 · D. M. Graham, A. Soltani-Vala, et al. · Journal of Applied Physics · 217
Selective-area low-pressure MOCVD of GaInAsP and related materials on planar InP substrates
1993 · M Gibbon, J P Stagg, et al. · Semiconductor Science and Technology · 161
Determination of the indium content and layer thicknesses in InGaN/GaN quantum wells by x-ray scattering
2003 · M. E. Vickers, M. J. Kappers, et al. · Journal of Applied Physics · 123
Indium segregation in InGaN quantum-well structures
2000 · N. Duxbury, U. Bangert, et al. · Applied Physics Letters · 120
The impact of trench defects in InGaN/GaN light emitting diodes and implications for the “green gap” problem
2014 · F. C.-P. Massabuau, M. J. Davies, et al. · Applied Physics Letters · 71
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The impact of gross well width fluctuations on the efficiency of GaN-based light emitting diodes
2013 · R. A. Oliver, F. C.-P. Massabuau, et al. · Applied Physics Letters · 57
Misfit dislocations in In‐rich InGaN/GaN quantum well structures
2006 · P. M. F. J. Costa, R. Datta, et al. · physica status solidi (a) · 57
Temporally resolved growth habit studies of InP/(InGa)As heterostructures grown by MOCVD on contoured InP substrates
1989 · B. Garrett, E.J. Thrush · Journal of Crystal Growth · 55
GaN-based LEDs grown on 6-inch diameter Si (111) substrates by MOVPE
2009 · D. Zhu, C. McAleese, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 51
Fundamental models of the metalorganic vapor-phase epitaxy of gallium nitride and their use in reactor design
2000 · R.P Pawlowski, C Theodoropoulos, et al. · Journal of Crystal Growth · 48
Transmission beyond the dispersion limit using anegative chirpelectroabsorption modulator
1994 · J.A.J. Fells, M.A. Gibbon, et al. · Electronics Letters · 47
Modeling and process design of III-nitride MOVPE at near-atmospheric pressure in close coupled showerhead and planetary reactors
2006 · M. Dauelsberg, C. Martin, et al. · Journal of Crystal Growth · 46
Selective and non-planar epitaxy of InP/GaInAs(P) by MOCVD
1993 · E.J. Thrush, J.P. Stagg, et al. · Materials Science and Engineering B · 46
Degradation of GaN-based quantum well light-emitting diodes
2008 · L. X. Zhao, E. J. Thrush, et al. · Journal of Applied Physics · 45
Measurement and control of reagent concentrations in MOCVD reactor using ultrasonics
1992 · J.P. Stagg, J. Christer, et al. · Journal of Crystal Growth · 44
Correlations between the morphology and emission properties of trench defects in InGaN/GaN quantum wells
2013 · F. C.-P. Massabuau, L. Trinh-Xuan, et al. · Journal of Applied Physics · 42
Selective and non-planar epitaxy of InP, GaInAs and GaInAsP using low pressure MOCVD
1992 · E.J. Thrush, M.A. Gibbon, et al. · Journal of Crystal Growth · 40
Compositional transients in MOCVD grown III–V heterostructures
1984 · E.J. Thrush, J.E.A. Whiteaway, et al. · Journal of Crystal Growth · 40
Study of GaN and InGaN films grown by metalorganic chemical vapour deposition
1997 · W. Van der Stricht, I. Moerman, et al. · Journal of Crystal Growth · 37
MOVPE growth optimization of high quality InGaN films.
1997 · W. Van der Stricht, I. Moerman, et al. · MRS Internet Journal of Nitride Semiconductor Research · 37
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Material optimisation for AlGaN/GaN HFET applications
2001 · Z. Bougrioua, I. Moerman, et al. · Journal of Crystal Growth · 32
Observation of thermally activated conduction at a GaN–sapphire interface
2001 · C. Mavroidis, J. J. Harris, et al. · Applied Physics Letters · 26
Metalorganic c.v.d. growth of GaAs-GaAlAs double heterojunction lasers having low interfacial recombination and low threshold current
1979 · E.J. Thrush, P.R. Selway, et al. · Electronics Letters · 24
Exciton localization in InGaN/GaN single quantum well structures
2003 · D. M. Graham, A. Soltani Vala, et al. · physica status solidi (b) · 19
Relationship between classical and quantum lifetimes in AlGaN/GaN heterostructures
2001 · J J Harris, K J Lee, et al. · Semiconductor Science and Technology · 19
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Works count: 108
Citation count: 1,859
H-index: 23
I10-index: 42
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