Work

Selective and non-planar epitaxy of InP/GaInAs(P) by MOCVD

Year: 1993

Type: article

Source: Materials Science and Engineering B

DOI: 10.1016/0921-5107(93)90335-k

Authors: E.J. Thrush, J.P. Stagg, M.A. Gibbon, R.E. Mallard, B. Hamilton, J.M. Jowett, E.M. Allen

Institutions: University of Oxford, University of Manchester

Language: English

Topic: Semiconductor Lasers and Optical Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2012216195

FWCI: 3.363

Cites: 16

Cited by: 46

Related to: 10