Year: 2004
Type: article
Abstract: We fabricated InAlGaN quaternary ultraviolet (UV)-light-emitting diodes (LEDs) on GaN substrates with a low dislocation density and on GaN templates consisting of n-GaN on sapphire substrates, and compared the characteristics of these LEDs. A UV LED on a GaN substrate showed a considerably higher output power than that on a GaN template and no saturation even at an injection current of 500 mA. Cathodeluminescence images indicated the advantages of using GaN substrates in InAlGaN UV LEDs.
DOI: 10.1143/jjap.43.8030
Authors: Katsushi Akita, Takao Nakamura, Hideki Hirayama
Institutions: Sumitomo Electric Industries (Japan), RIKEN
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W2005462741