2010 · Shin Hashimoto, Katsushi Akita, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 30

Superior DC and RF Performance of AlGaN-Channel HEMT at High Temperatures

2012 · Maiko HATANO, Norimasa YAFUNE, et al. · IEICE Transactions on Electronics · 27

Effects of In composition on ultraviolet emission efficiency in quaternary InAlGaN light-emitting diodes on freestanding GaN substrates and sapphire substrates

2005 · Takashi Kyono, Hideki Hirayama, et al. · Journal of Applied Physics · 24

High carrier concentration in high Al‐composition AlGaN‐channnel HEMTs

2011 · Shin Hashimoto, Katsushi Akita, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 23

Enhancement of two‐dimensional electron gases in AlGaN‐channel high‐electron‐mobility transistors with AlN barrier layers

2012 · Shin Hashimoto, Katsushi Akita, et al. · physica status solidi (a) · 20

Influence of residual oxygen impurity in quaternary InAlGaN multiple-quantum-well active layers on emission efficiency of ultraviolet light-emitting diodes on GaN substrates

2006 · Takashi Kyono, Hideki Hirayama, et al. · Journal of Applied Physics · 17

Advantages of GaN Substrates in InAlGaN Quaternary Ultraviolet-Light-Emitting Diodes

2004 · Katsushi Akita, Takao Nakamura, et al. · Japanese Journal of Applied Physics · 15

PDF

Epitaxial Layers of AlGaN Channel HEMTs on AlN Substrates

2010 · Shin Hashimoto, Katsushi Akita, et al. · 10

Milliwatt Power 350 nm-band Quaternary InAlGaN UV-LEDs on GaN Substrates

2004 · Hideki Hirayama, Katsushi Akita, et al. · physica status solidi (a) · 10

Characteristics of InGaN light‐emitting diodes on GaN substrates with low threading dislocation densities

2007 · Katsushi Akita, Takashi Kyono, et al. · physica status solidi (a) · 9

High‐efficiency 350 nm‐band quaternary InAlGaN‐based UV‐LED on GaN/sapphire template

2005 · Hideki Hirayama, Takashi Kyono, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 9

Effects of GaN substrates on InAlGaN quaternary UV LEDs

2004 · Katsushi Akita, Takao Nakamura, et al. · physica status solidi (a) · 8

Recent development of SWIR focal plane array with InGaAs/GaAsSb type-II quantum wells

2016 · Hiroshi Inada, Kenichi Machinaga, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 6

Structural and electrical properties of InAs/GaSb superlattices grown by metalorganic vapor phase epitaxy for midwavelength infrared detectors

2017 · Suguru Arikata, Takashi Kyono, et al. · physica status solidi (a) · 5

Short Wavelength and High-Efficiency Operation of Deep UV LED Using Quaternary InAlGaN

2004 · Hideki HIRAYAMA, Katsushi AKITA, et al. · The Review of Laser Engineering · 5

PDF

MOVPE growth for photodiodes in 2.5 µm region with InGaAs/GaAsSb type‐II quantum wells

2013 · Kei Fujii, Takashi Ishizuka, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 4

High‐efficiency UV LEDs using quaternary InAlGaN

2006 · Hideki Hirayama, Takashi Kyono, et al. · Electrical Engineering in Japan · 4

Significant improvements of quantum efficiency of quaternary InAlGaN UV‐LEDs on GaN substrates

2005 · Takashi Kyono, Hideki Hirayama, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2

Structural and electrical properties of InAs/GaSb superlattices grown by metalorganic vapor phase epitaxy for midwavelength infrared detectors

2016 · Suguru Arikata, Takashi Kyono, et al. · Compound Semiconductor Week (CSW)

Works count: 32

Citation count: 1,092

H-index: 13

I10-index: 15