Work

MOVPE growth for photodiodes in 2.5 µm region with InGaAs/GaAsSb type‐II quantum wells

Year: 2013

Type: article

Source: Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics

DOI: 10.1002/pssc.201200611

Authors: Kei Fujii, Takashi Ishizuka, Youichi Nagai, Yasuhiro Iguchi, Katsushi Akita

Institution: Sumitomo Electric Industries (Japan)

Language: English

Topic: Advanced Semiconductor Detectors and Materials

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2104245686

FWCI:

Cites:

Cited by: 4

Related to: 10