Continuous-Wave Operation of 520 nm Green InGaN-Based Laser Diodes on Semi-Polar {20\bar21} GaN Substrates
Year: 2009
Type: article
Abstract: Room-temperature continuous-wave operation of 520 nm InGaN-based green laser diodes on semi-polar {2021} GaN substrates was demonstrated. A threshold current of 95 mA corresponding to a threshold current density of 7.9 kA/cm 2 and a threshold voltage of 9.4 V were achieved by improving the quality of epitaxial layers on {2021} GaN substrates using lattice-matched quaternary InAlGaN cladding layers and also by adopting a ridge-waveguide laser structure.
Source: Applied Physics Express
Authors: Yusuke Yoshizumi, Masahiro Adachi, Yohei Enya, Takashi Kyono, Shinji Tokuyama, Takamichi Sumitomo, Katsushi Akita, Takatoshi Ikegami, Masaki Ueno, Koji Katayama, Takao Nakamura
Institution: Sumitomo Electric Industries (Japan)
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W2022800577