Author

Yohei Enya

Observed names: ENYA, YOHEI, Y Enya, Yohei ENYA

Observed institutions: Sumitomo Electric Industries (Japan), The Institute for Solid State Physics, The University of Tokyo, The University of Tokyo

OpenAlex ID: A5086201430

531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar {20\bar21} Free-Standing GaN Substrates

2009 · Yohei Enya, Yusuke Yoshizumi, et al. · Applied Physics Express · 383

Continuous-Wave Operation of 520 nm Green InGaN-Based Laser Diodes on Semi-Polar {20\bar21} GaN Substrates

2009 · Yusuke Yoshizumi, Masahiro Adachi, et al. · Applied Physics Express · 183

High-Power (over 100 mW) Green Laser Diodes on Semipolar $\{20\bar{2}1\}$ GaN Substrates Operating at Wavelengths beyond 530 nm

2012 · Shimpei Takagi, Yohei Enya, et al. · Applied Physics Express · 122

Low Threshold Current Density InGaN Based 520–530 nm Green Laser Diodes on Semi-Polar {20\bar21} Free-Standing GaN Substrates

2010 · Masahiro Adachi, Yusuke Yoshizumi, et al. · Applied Physics Express · 91

Optical Polarization Characteristics of InGaN Quantum Wells for Green Laser Diodes on Semi-Polar {20\bar21} GaN Substrates

2010 · Takashi Kyono, Yusuke Yoshizumi, et al. · Applied Physics Express · 69

Weak Carrier/Exciton Localization in InGaN Quantum Wells for Green Laser Diodes Fabricated on Semi-Polar {20\bar21} GaN Substrates

2010 · Mitsuru Funato, Akio Kaneta, et al. · Applied Physics Express · 51

Long-Lifetime True Green Laser Diodes with Output Power over 50 mW above 525 nm Grown on Semipolar $\{20\bar{2}1\}$ GaN Substrates

2012 · Katsunori Yanashima, Hiroshi Nakajima, et al. · Applied Physics Express · 48

Nanoscopic Photoluminescence Properties of a Green-Emitting InGaN Single Quantum Well on a $\{20\bar{2}1\}$ GaN Substrate Probed by Scanning Near-Field Optical Microscopy

2012 · Akio Kaneta, Yoon-Seok Kim, et al. · Applied Physics Express · 28

InGaN-based true green laser diodes on novel semi-polar GaN substrates

2010 · Masaki Ueno, Yusuke Yoshizumi, et al. · Journal of Crystal Growth · 23

Optical de Haas oscillations of charged excitons in type-II ZnSe/BeTe quantum wells

2006 · Z W Ji, Y Enya, et al. · Journal of Physics Conference Series · 5

Spatially indirect photoluminescence of ZnSe/BeTe type II quantum wells in pulsed high magnetic fields

2008 · Shojiro Takeyama, Rui Shen, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 4

True Green Laser Diodes Fabricated on Semi-Polar 2021 GaN Substrates

2010 · Yohei ENYA, Yusuke YOSHIZUMI, et al. · The Review of Laser Engineering

Works count: 21

Citation count: 1,007

H-index: 9

I10-index: 9