Weak Carrier/Exciton Localization in InGaN Quantum Wells for Green Laser Diodes Fabricated on Semi-Polar {20\bar21} GaN Substrates
Year: 2010
Type: article
Abstract: Carrier/exciton localization in InGaN quantum wells (QWs) for green laser diodes fabricated on semi-polar {2021} GaN substrates is assessed using time-resolved photoluminescence (TRPL) spectroscopy. The estimated characteristic energy, which represents the localization depth in a {2021} InGaN QW, is 15.1 meV. This value is much smaller than that reported for c -plane green InGaN QWs, indicating a high compositional homogeneity of {2021} InGaN QWs and consequently suggesting that the GaN semi-polar {2021} plane is suitable for fabricating green laser diodes.
Source: Applied Physics Express
Authors: Mitsuru Funato, Akio Kaneta, Yoichi Kawakami, Yohei Enya, Koji Nishizuka, Masaki Ueno, Takao Nakamura
Institutions: Kyoto University, Sumitomo Electric Industries (Japan)
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W2070176010