Author

Koji Nishizuka

Observed names: K. Nishizuka, Nishizuka, Koji, 幸司西塚, 西塚幸司

Observed institutions: Osaka Electro-Communication University, Kyoto University, Sumitomo Electric Industries (Japan)

OpenAlex ID: A5113589500

Efficient radiative recombination from ⟨112¯2⟩ -oriented InxGa1−xN multiple quantum wells fabricated by the regrowth technique

2004 · K. Nishizuka, M. Funato, et al. · Applied Physics Letters · 160

Efficient rainbow color luminescence from InxGa1−xN single quantum wells fabricated on {112¯2} microfacets

2005 · K. Nishizuka, M. Funato, et al. · Applied Physics Letters · 74

Weak Carrier/Exciton Localization in InGaN Quantum Wells for Green Laser Diodes Fabricated on Semi-Polar {20\bar21} GaN Substrates

2010 · Mitsuru Funato, Akio Kaneta, et al. · Applied Physics Express · 51

Efficient green emission from (112¯2) InGaN∕GaN quantum wells on GaN microfacets probed by scanning near field optical microscopy

2007 · Y. Kawakami, K. Nishizuka, et al. · Applied Physics Letters · 29

Radiative carrier recombination dependent on temperature and well width of InGaN/GaN single quantum well

2003 · A. Sasaki, K. Nishizuka, et al. · Solid State Communications · 26

Surface plasmon enhanced InGaN light emitter

2005 · Koichi Okamoto, Isamu Niki, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 5

Development of Ammonia Gas Removal Device

2012 · Masatoshi Majima, Chihiro Hiraiwa, et al. · 2

InGaN/GaN三次元量子構造からの多色発光(特別セッションテーマ: GaN系LEDの内部量子効率を決めているものは?, 窒化物半導体光・電子デバイス・材料, 及び関連技術, 及び一般(窒化物半導体国際ワークショップ))

2005 · 充船戸, 晃央小谷, et al. · Combinatorial Pattern Matching

Efficient Luminescence from {11.2} InGaN/GaN Quantum Wells

2004 · Mitsuru Funato, Koji Nishizuka, et al. · MRS Proceedings

InGaN単一量子井戸における双ピーク発光の成長温度依存性(レーザ・量子エレクトロニクス)

2003 · 幸司西塚, 昭夫佐々木, et al. · 電子情報通信学会論文誌. C, エレクトロニクス

Works count: 12

Citation count: 347

H-index: 5

I10-index: 5