Work

Radiative carrier recombination dependent on temperature and well width of InGaN/GaN single quantum well

Year: 2003

Type: article

Source: Solid State Communications

DOI: 10.1016/j.ssc.2003.09.018

Authors: A. Sasaki, K. Nishizuka, T. Wang, S. Sakai, A. Kaneta, Y. Kawakami, Sg. Fujita

Institutions: Osaka Electro-Communication University, Nitride Semiconductors Co., Ltd. (Japan), Tokushima University, Kyoto University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2084616634

FWCI: 1.061

Cites: 42

Cited by: 26

Related to: 10