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InGaN単一量子井戸における双ピーク発光の成長温度依存性(レーザ・量子エレクトロニクス)

Year: 2003

Type: article

Source: 電子情報通信学会論文誌. C, エレクトロニクス

Authors: 幸司西塚, 昭夫佐々木, 昭男金田, 養一川上, 茂夫藤田, 昌宏石田, 正昭油利

Language: Japanese

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W216794292

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