Work

In-situ Measurement of Temperature Variation in Si Wafer during Millisecond Rapid Thermal Annealing Induced by Thermal Plasma Jet Irradiation

Year: 2008

Type: article

Source: Japanese Journal of Applied Physics

DOI: 10.1143/jjap.47.2460

Authors: Hirokazu Furukawa, Seiichiro Higashi, Tatsuya Okada, Hirotaka Kaku, Hideki Murakami, Seiichi Miyazaki

Institution: Hiroshima University

Language: English

Topic: Low-Pressure Plasma Processing and Diagnostics

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2005808921

FWCI: 2.462

Cites: 9

Cited by: 21

Related to: 10