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Seiichiro Higashi
Observed names:
Higashi Seiichiro,
S Higashi,
S. HIGASHI,
S. Higashi,
Seiichiro HIGASHI,
Seiichiro Higashi Seiichiro Higashi
show all 6
Institution:
Hiroshima University
Observed institutions:
Hiroshima University,
Epson (United States),
Seiko Holdings (Japan),
Tokyo University of Agriculture and Technology
OpenAlex ID:
A5110107909
Works
229
Awards
6
Native Oxidation Growth on Ge(111) and (100) Surfaces
2011
·
Siti Kudnie Sahari
, Hideki Murakami
, et al.
·
Japanese Journal of Applied Physics
·
66
PDF
Crystallization of amorphous Ge films induced by semiconductor diode laser annealing
2007
·
K. Sakaike
, S. Higashi
, et al.
·
Thin Solid Films
·
57
Pulsed-Laser-Induced Microcrystallization and Amorphization of Silicon Thin Films
2001
·
Seiichiro Higashi
, Toshiyuki Sameshima
·
Japanese Journal of Applied Physics
·
49
High-Quality SiO2/Si Interface Formation and Its Application to Fabrication of Low-Temperature-Processed Polycrystalline Si Thin-Film Transistor
2002
·
Seiichiro Higashi
, Daisuke Abe
, et al.
·
Japanese Journal of Applied Physics
·
42
PDF
Heat Treatment with High-Pressure H2O Vapor of Pulsed Laser Crystallized Silicon Films
2000
·
Katsumi Asada Katsumi Asada
, Keiji Sakamoto Keiji Sakamoto
, et al.
·
Japanese Journal of Applied Physics
·
42
PDF
A new crystallization technique of Si films on glass substrate using thermal plasma jet
2005
·
H. Kaku
, S. Higashi
, et al.
·
Applied Surface Science
·
41
Application of Plasma Jet Crystallization Technique to Fabrication of Thin-Film Transistor
2004
·
Seiichiro Higashi
, Hirotaka Kaku
, et al.
·
Japanese Journal of Applied Physics
·
35
PDF
Electrical Properties of Pulsed Laser Crystallized Silicon Films
1999
·
Toshiyuki Sameshima Toshiyuki Sameshima
, Keiko Saitoh Keiko Saitoh
, et al.
·
Japanese Journal of Applied Physics
·
34
Improvement of Electrical Properties of Pulsed Laser Crystallized Silicon Films by Oxygen Plasma Treatment
2000
·
Yoshiyuki Tsunoda Yoshiyuki Tsunoda
, Toshiyuki Sameshima Toshiyuki Sameshima
, et al.
·
Japanese Journal of Applied Physics
·
33
Self-Assembling Formation of Ni Nanodots on SiO2 Induced by Remote H2 Plasma Treatment and Their Electrical Charging Characteristics
2008
·
Katsunori Makihara
, Kazuhiro Shimanoe
, et al.
·
Japanese Journal of Applied Physics
·
31
Stress in Pulsed-Laser-Crystallized Silicon Films
2001
·
Seiichiro Higashi
, Nobuyuki Ando
, et al.
·
Japanese Journal of Applied Physics
·
31
PDF
Single-Grain Si TFTs With ECR-PECVD Gate $hbox SiO_2$
2004
·
R. Ishihara
, Y. Hiroshima
, et al.
·
IEEE Transactions on Electron Devices
·
30
PDF
Electrical Properties of Excimer-Laser-Crystallized Lightly Doped Polycrystalline Silicon Films
1999
·
Seiichiro Higashi
, Kentaro Ozaki
, et al.
·
Japanese Journal of Applied Physics
·
28
PDF
Analysis of Transient Temperature Profile During Thermal Plasma Jet Annealing of Si Films on Quartz Substrate
2006
·
Tatsuya Okada
, Seiichiro Higashi
, et al.
·
Japanese Journal of Applied Physics
·
24
PDF
Kinetics of thermally oxidation of Ge(100) surface
2013
·
S K Sahari
, A Ohta
, et al.
·
Journal of Physics Conference Series
·
22
PDF
X-ray Photoelectron Spectroscopy Study of Interfacial Reactions between Metal and Ultrathin Ge Oxide
2011
·
Akio Ohta
, Tomohiro Fujioka
, et al.
·
Japanese Journal of Applied Physics
·
22
Crystallization of Si in Millisecond Time Domain Induced by Thermal Plasma Jet Irradiation
2006
·
Seiichiro Higashi
, Hirotaka Kaku
, et al.
·
Japanese Journal of Applied Physics
·
22
PDF
Characterization of chemical bonding features at metal/GeO2 Interfaces by X-ray photoelectron spectroscopy
2011
·
Masafumi Matsui
, Hideki Murakami
, et al.
·
Microelectronic Engineering
·
21
Characterization of Microcrystalline Silicon Thin Film Transistors Fabricated by Thermal Plasma Jet Crystallization Technique
2010
·
Seiichiro Higashi
, Kenji Sugakawa
, et al.
·
Japanese Journal of Applied Physics
·
21
PDF
In-situ Measurement of Temperature Variation in Si Wafer during Millisecond Rapid Thermal Annealing Induced by Thermal Plasma Jet Irradiation
2008
·
Hirokazu Furukawa
, Seiichiro Higashi
, et al.
·
Japanese Journal of Applied Physics
·
21
Low-Temperature Formation of Device-Quality SiO2/Si Interfaces Using Electron Cyclotron Resonance Plasma-Enhanced Chemical Vapor Deposition
2001
·
Seiichiro Higashi
, Daisuke Abe
, et al.
·
Japanese Journal of Applied Physics
·
21
PDF
Direct observation of grain growth from molten silicon formed by micro-thermal-plasma-jet irradiation
2012
·
Shohei Hayashi
, Yuji Fujita
, et al.
·
Applied Physics Letters
·
20
PDF
Formation of High Crystallinity Silicon Films by High Speed Scanning of Melting Region Formed by Atmospheric Pressure DC Arc Discharge Micro-Thermal-Plasma-Jet and Its Application to Thin Film Transistor Fabrication
2010
·
Shohei Hayashi
, Seiichiro Higashi
, et al.
·
Applied Physics Express
·
20
PDF
Crystallization of Si films on glass substrate using thermal plasma jet
2005
·
S. Higashi
, H. Kaku
, et al.
·
Thin Solid Films
·
20
Influence of substrate dc bias on crystallinity of silicon films grown at a high rate from inductively-coupled plasma CVD
2005
·
N. Kosku
, H. Murakami
, et al.
·
Applied Surface Science
·
20
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Works count:
229
Citation count:
1,294
H-index:
21
I10-index:
40
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