Crystallization of amorphous Ge films induced by semiconductor diode laser annealing
Year: 2007
Type: article
Source: Thin Solid Films
Authors: K. Sakaike, S. Higashi, H. Murakami, S. Miyazaki
Institution: Hiroshima University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2012143450