Work

Low Temperature Silicon Surface Cleaning by HF Etching/Ultraviolet Ozone Cleaning (HF/UVOC) Method (II)–in situ UVOC

Year: 1989

Type: article

Abstract: A new method to obtain clean silicon surfaces using a thermal treatment at as low as 700°C is proposed. The method consists of an ex situ treatment of HF dipping followed by a rinse in distilled, deionized water and in situ treatments of both UVOC under low oxygen pressure and annealing in vacuo. From the Arrhenius plot of the removal rate of the surface oxide, two mechanisms corresponding to a diffusion of the volatile product, SiO, and a reaction between oxygen and silicon are suggested to exist, with activation energies 3.7 eV and 1.9 eV, respectively.

Source: Japanese Journal of Applied Physics

DOI: 10.1143/jjap.28.2425

Authors: Tetsuya Kaneko, Maki Suemitsu, Nobuo Miyamoto

Institutions: Tohoku University, Research Institute of Electrical Communication, Tohoku University

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: bronze

Funder: Office of Science

OpenAlex ID: W2006400514

FWCI: 1.845

Cites: 7

Cited by: 28

Related to: 10