Author

Nobuo Miyamoto

Observed names: N. Miyamoto, NOBUO MIYAMOTO, Nobuo MIYAMOTO, Nobuo Miyamoto Nobuo Miyamoto

Observed institutions: Tohoku University, Tohoku Gakuin University, Research Institute of Electrical Communication, Tohoku University, Hitachi (Japan)

OpenAlex ID: A5111920131

Infrared spectroscopy study of initial stages of oxidation of hydrogen-terminated Si surfaces stored in air

1994 · Michio Niwano, Jun-ichi Kageyama, et al. · Journal of Applied Physics · 242

Kinetics of oxidation on hydrogen-terminated Si(100) and (111) surfaces stored in air

1996 · Taka-aki Miura, Michio Niwano, et al. · Journal of Applied Physics · 120

Photoemission study of the SiO2/Si interface structure of thin oxide films on Si(100), (111), and (110) surfaces

1991 · Michio Niwano, Hitoshi Katakura, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 72

Initial Oxidation of Si(100)- (2×1) as an Autocatalytic Reaction

1999 · Maki Suemitsu, Yoshiharu Enta, et al. · Physical Review Letters · 64

Infrared spectroscopic study of initial stages of ultraviolet ozone oxidation of Si(100) and (111) surfaces

1994 · Michio Niwano, Jun-ichi Kageyama, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 58

Thermal oxidation of outdiffusing SiO with permeating O2 in a SiO2 film studied by angle-resolved X-ray photoelectron spectroscopy

1997 · Yuji Takakuwa, Mizuhisa Nihei, et al. · Applied Surface Science · 56

Oxidation processes on the H2O-chemisorbed Si(100) surface studied by in-situ infrared spectroscopy

1998 · Michio Niwano, Miyako Terashi, et al. · Surface Science · 54

Real-time, in situ infrared study of etching of Si(100) and (111) surfaces in dilute hydrofluoric acid solution

1996 · Michio Niwano, Taka-aki Miura, et al. · Journal of Applied Physics · 50

High Quality Silicon Epitaxy at 500°C using Silane Gas-Source Molecular Beam Technique

1989 · Fumihiko Hirose, Maki Suemitsu, et al. · Japanese Journal of Applied Physics · 46

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Two-Dimensional Growth and Decomposition of Initial Thermal SiO2 Layer on Si(100)

1994 · Tetsuhiro Horie, Yuji Takakuwa, et al. · Japanese Journal of Applied Physics · 43

Surface Hydrogen Desorption as a Rate-Limiting Process in Silane Gas-Source Molecular Beam Epitaxy

1990 · Fumihiko Hirose, Maki Suemitsu, et al. · Japanese Journal of Applied Physics · 40

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Oxidation of hydrogen-terminated Si surfaces studied by infrared spectroscopy

1994 · Michio Niwano, Jun-ichi Kageyama, et al. · Surface Science · 39

Anomalous Diffusion of Phosphorus into Silicon

1970 · Kunihiro Yagi, Nobuo Miyamoto, et al. · Japanese Journal of Applied Physics · 36

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Thermal oxidation mechanism based on formation and diffusion of volatile SiO molecules

1994 · Yuji Takakuwa, Mizuhisa Nihei, et al. · Journal of Non-Crystalline Solids · 35

Effects of mixing germane in silane gas-source molecular beam epitaxy

1993 · Ki-Joon Kim, Maki Suemitsu, et al. · Applied Physics Letters · 34

In situ infrared study of chemical state of Si surface in etching solution

1994 · Michio Niwano, Yasuo Kimura, et al. · Applied Physics Letters · 30

Aluminum alloy ultrahigh vacuum chamber for molecular beam epitaxy

1987 · Maki Suemitsu, Tetsuya Kaneko, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 30

Low Temperature Silicon Surface Cleaning by HF Etching/Ultraviolet Ozone Cleaning (HF/UVOC) Method (I) –Optimization of the HF Treatment–

1989 · Maki Suemitsu, Tetsuya Kaneko, et al. · Japanese Journal of Applied Physics · 29

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Initial stages of oxidation of hydrogen-terminated Si surface stored in air

1996 · Taka-aki Miura, Michio Niwano, et al. · Applied Surface Science · 28

Silane gas-source atomic layer epitaxy

1992 · Fumihiko Hirose, Maki Suemitsu, et al. · Applied Surface Science · 28

Low Temperature Silicon Surface Cleaning by HF Etching/Ultraviolet Ozone Cleaning (HF/UVOC) Method (II)–in situ UVOC

1989 · Tetsuya Kaneko, Maki Suemitsu, et al. · Japanese Journal of Applied Physics · 28

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Outdiffusion and Subsequent Desorption of Volatile SiO Molecules during Annealing of Thick SiO2 Films in Vacuum

1993 · Yuji Takakuwa, Mizuhisa Nihei Mizuhisa Nihei, et al. · Japanese Journal of Applied Physics · 27

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Silane adsorption on Si(001)2×1

1991 · Fumihiko Hirose, Maki Suemitsu, et al. · Journal of Applied Physics · 27

Perfect Crystal Growth of Silicon by Vapor Deposition

1975 · Jun‐ichi Nishizawa, Takeshi Terasaki, et al. · Journal of The Electrochemical Society · 25

The Lattice Misfit and Its Compensation in the Si‐Epitaxial Layer by Doping with Germanium and Carbon

1975 · Yao Ting Lee, Nobuo Miyamoto, et al. · Journal of The Electrochemical Society · 25

Works count: 115

Citation count: 2,022

H-index: 25

I10-index: 59