Work

Erratum: “Low temperature metalorganic chemical vapor deposition of tungsten nitride as diffusion barrier for copper metallization” [J. Vac. Sci. Technol. B 17, 1101 (1999)]

Year: 1999

Type: erratum

Source: Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena

DOI: 10.1116/1.590892

Authors: Jean E. Kelsey, Cindy Goldberg, Guilleromo Nuesca, Gregory Peterson, Alain E. Kaloyeros, Barry Arkles

Institutions: University at Albany, State University of New York, TE Laboratories (Ireland), Pennsylvania Geological Survey

Language: English

Topic: Copper Interconnects and Reliability

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2007020005

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