Work

Cr profiles in semi-insulating GaAs after annealing with and without SiO2 encapsulants in a H2-As4 atmosphere

Year: 1980

Type: article

Source: Applied Physics Letters

DOI: 10.1063/1.91735

Authors: V. Eu, M. Feng, W. B. Henderson, H. B. Kim, J. M. Whelan

Institutions: RTX (United States), Raytheon (United States), Hughes Aircraft (United States), University of Southern California

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2007369720

FWCI: 4.24

Cites: 3

Cited by: 30

Related to: 10