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V. K. Eu

Heavily doped p-GaAs grown by low-pressure organometallic vapor phase epitaxy using liquid CCl4
1992 · L. W. Yang, P. D. Wright, et al. · Journal of Applied Physics · 73
Ultrahigh frequency operation of ion-implanted GaAs metal-semiconductor field-effect transistors
1984 · M. Feng, H. Kanber, et al. · Applied Physics Letters · 42
Does the two-dimensional electron gas effect contribute to high-frequency and high-speed performance of field-effect transistors?
1990 · M. Feng, C. L. Lau, et al. · Applied Physics Letters · 39
Cr profiles in semi-insulating GaAs after annealing with and without SiO2 encapsulants in a H2-As4 atmosphere
1980 · V. Eu, M. Feng, et al. · Applied Physics Letters · 30
Impurity induced layer disordering of Si implanted AlxGa1−xAs-GaAs quantum-well heterostructures: Layer disordering via diffusion from extrinsic dislocation loops
1987 · L. J. Guido, K. C. Hsieh, et al. · Journal of Applied Physics · 28
Si-implanted and disordered stripe-geometry AlxGa1−xAs-GaAs quantum well lasers
1985 · P. Gavrilovic, K. Meehan, et al. · Applied Physics Letters · 27
Study of electrical and chemical profiles of Si implanted in semi-insulating GaAs substrate annealed under SiO2 and capless
1981 · M. Feng, S. P. Kwok, et al. · Journal of Applied Physics · 24
Silicon implanted super low-noise GaAs MESFET
1982 · M. Feng, V.K. Eu, et al. · Electronics Letters · 23
Low noise GaAs metal-semiconductor field-effect transistor made by ion implantation
1982 · M. Feng, V. K. Eu, et al. · Applied Physics Letters · 17
Study of cr, si and mn distribution in semi-insulating gaas after annealing with and without SiO2 in an H2-AS4 atmosphere
1981 · M. Feng, V. Eu, et al. · Journal of Electronic Materials · 16
High-efficiency GaAs power MESFETs prepared by ion implantation
1982 · M. Feng, H. Kanber, et al. · Electronics Letters · 12
Correlation between chemical and electrical profiles in Si+, Se+ and S+ implanted bulk and epitaxial GaAs
1982 · H. Kanber, M. Feng, et al. · Journal of Electronic Materials · 10
Heteroepitaxial In0.1Ga0.9As metal-semiconductor field-effect transistors fabricated on GaAs and Si substrates
1989 · G. W. Wang, C. Ito, et al. · Applied Physics Letters · 9
GaAs MESFET's made by ion implantation into MOCVD Buffer layers
1984 · M. Feng, V.K. Eu, et al. · IEEE Electron Device Letters · 9
High performance ion-implanted low noise GaAs MESFET's
1982 · M. Feng, V.K. Eu, et al. · IEEE Electron Device Letters · 8
Low-noise GaAs field-effect transistor made by molecular beam epitaxy
1982 · M. Feng, V. K. Eu, et al. · Applied Physics Letters · 7
An experimental determination of electron drift velocity in 0.5- mu m gate-length ion-implanted GaAs MESFET's
1991 · M. Feng, C.L. Lau, et al. · IEEE Electron Device Letters · 6
High Volume Production Growth of GaAs on Silicon Substrates
1986 · Chris R. Ito, M. Feng, et al. · MRS Proceedings · 5
Optimization of ion-implanted low noise GaAs metal-semiconductor field effect transistors
1984 · M. Feng, V. K. Eu, et al. · Journal of Applied Physics · 5
A low-noise GaAs MESFET made with graded-channel doping profiles
1984 · M. Feng, V.K. Eu, et al. · IEEE Electron Device Letters · 5
Growth and characterization of Si doped vapor phase epitaxial GaAs for mesfet
1982 · M. Feng, V. K. Eu, et al. · Journal of Electronic Materials · 2
Si-doped GaAs by SiCl4-AsCl3 liquid solution in AsCl3/GaAs-Ga/H2 chemical vapor deposition system
1981 · M. Feng, V. Eu, et al. · Applied Physics Letters · 2
CHARACTERIZATION OF ION IMPLANTED GaAs SUPER LOW NOISE FIELD EFFECT TRANSISTOR.
1983 · M. Feng, H. Kanber, et al. · 1
Multilevel Si doping in GaAs using a single AsCl3:SiCl4 doping source
1982 · V. Eu, M. Feng, et al. · Journal of Applied Physics · 1
A High-Performance, Low-Temperature Self-Aligned Gate E/D Process
1986 · S. P. Kwok, Y. Chang, et al. · Technical digest -- IEEE Compound Semiconductor Integrated Circuit Symposium
Works count: 28
Citation count: 401
H-index: 11
I10-index: 12
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