Work

Heavily doped p-GaAs grown by low-pressure organometallic vapor phase epitaxy using liquid CCl4

Year: 1992

Type: article

Source: Journal of Applied Physics

DOI: 10.1063/1.351637

Authors: L. W. Yang, P. D. Wright, V. Eu, Z. H. Lu, A. Majerfeld

Institutions: Ford Motor Company (United States), University of Colorado Boulder, University of Colorado System

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2008256563

FWCI: 5.647

Cites: 13

Cited by: 73

Related to: 10