Work

An experimental determination of electron drift velocity in 0.5- mu m gate-length ion-implanted GaAs MESFET's

Year: 1991

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/55.75697

Authors: M. Feng, C.L. Lau, V. Eu

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2160358952

FWCI: 1.344

Cites: 3

Cited by: 6

Related to: 10