Work

Influence of Standing Waves on Impurity Analysis of Si(001) Wafer Using Commercially Available Total-Reflection X-Ray Fluorescence Analyzer

Year: 1993

Type: article

Abstract: In the analysis of trace impurities (on the order of 1010 atoms/cm2) on Si wafer surfaces using the commercially available total-reflection X-ray fluorescence analyzer, the X-ray fluorescence radiations are enhanced for the particular incident azimuth at which the evanescence beam penetrating into the Si wafer satisfies the Bragg condition. We investigated whether the enhancement of fluorescence radiation is due to the standing waves formed inside and outside the wafer surface. It is shown, using a sample which is intentionally contaminated with Zn, that the intensity enhancement is not directly connected with this phenomenon.

Source: Japanese Journal of Applied Physics

DOI: 10.1143/jjap.32.4750

Authors: Kenji Yakushiji, Shinji Ohkawa, Atsushi Yoshinaga, Jimpei Harada

Institutions: Showa Denko (Japan), Nagoya University

Language: English

Topic: X-ray Spectroscopy and Fluorescence Analysis

Subfield: Radiation

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: bronze

OpenAlex ID: W2007753978

FWCI: 1.01

Cites: 5

Cited by: 7

Related to: 10