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Author

Shinji Ohkawa

Institution: Showa Denko (Japan)
OpenAlex ID: A5111565976
Effects of the Heating Rate in Alloying of An-Ge ton-Type GaAs on the Ohmic Properties
1975 · Naoki Yokoyama, Shinji Ohkawa, et al. · Japanese Journal of Applied Physics · 28
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Effects of the growth conditions on the incorporation of deep levels in vapor-grown GaAs
1979 · Masashi Ozeki, Junji Komeno, et al. · Journal of Applied Physics · 24
Main Peak Profiles of Total Reflection X-Ray Fluorescence Analysis of Si(001) Wafers Excited by Monochromatic X-Ray Beam W-Lβ (II)
1993 · Kenji Yakushiji, Shinji Ohkawa, et al. · Japanese Journal of Applied Physics · 20
Simplified Expression for the Distribution of Diffused Impurity
1971 · Yoshio Nakajima, Shinji Ohkawa, et al. · Japanese Journal of Applied Physics · 17
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Growth of Iron‐Doped Epitaxial Layers for GaAs Field Effect Transistors
1977 · Kenya Nakai, Kuninori Kitahara, et al. · Journal of The Electrochemical Society · 15
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Spurious Peaks in Total Reflection X-Ray Fluorescence Analysis
1995 · Kenji Yakushiji, Shinji Ohkawa, et al. · Analytical Sciences · 13
Main Peak Profiles of Total Reflection X-Ray Fluorescence Analysis of Si(001) Wafers Excited by Monochromatic X-Ray Beam W-Lβ (I)
1992 · Kenji Yakushiji, Shinji Ohkawa, et al. · Japanese Journal of Applied Physics · 13
Submicron GaAs Epitaxial Layer from Diethylgalliumchloride and Arsine
1976 · Yoshiro Nakayama, Shinji Ohkawa, et al. · Journal of The Electrochemical Society · 13
Arsenic Diffusion into Silicon from Elemental Source
1975 · Shinji Ohkawa, Yoshio Nakajima, et al. · Japanese Journal of Applied Physics · 12
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Thermal Oxidation of Arsenic‐Diffused Silicon
1978 · Shinji Ohkawa, Yoshio Nakajima · Journal of The Electrochemical Society · 11
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Origins of Spurious Peaks of Total Reflection X-Ray Fluorescence Analysis of Si Wafers Excited by Monochromatic X-Ray Beam W-Lβ
1994 · Kenji Yakushiji, Shinji Ohkawa, et al. · Japanese Journal of Applied Physics · 10
Current Limitation Induced by Infrared Light in n-Type GaAs Thin Layers on Semi-Insulating Cr-Doped GaAs
1982 · Kuninori Kitahara, Kenya Nakai, et al. · Japanese Journal of Applied Physics · 10
Substrate Bias Effect on Ion-Implanted GaAs MESFETs
1980 · Kuninori Kitahara, Kenya Nakai, et al. · Japanese Journal of Applied Physics · 8
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Trace Analysis of a Beryllium Window for a Solid State Detector System by Inductively Coupled Plasma Mass Spectrometry
1994 · Shuji Kozono, Taizo Itoh, et al. · Analytical Sciences · 7
Influence of Standing Waves on Impurity Analysis of Si(001) Wafer Using Commercially Available Total-Reflection X-Ray Fluorescence Analyzer
1993 · Kenji Yakushiji, Shinji Ohkawa, et al. · Japanese Journal of Applied Physics · 7
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The Effect of the Oxide Layer on the Diffusion of Ga in Si
1972 · Yoshio Nakajima, Shinji Ohkawa · Japanese Journal of Applied Physics · 7
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Growth kinetics of amorphous and microcrystalline silicon studied by using radical beam
1985 · Seiichi Miyazaki, Hiroharu Hirata, et al. · Journal of Non-Crystalline Solids · 5
Atmosphere Effect on Migration of Co and Si in Au-Go-Si System
1975 · Shinji Ohkawa, Osamu Akanuma, et al. · Japanese Journal of Applied Physics · 4
Diffusion Profiles of Arsenic in Silicon Observed by Backscattering Method and by Electrical Measurement
1974 · Shinji Ohkawa, Yoshio Nakajima, et al. · Japanese Journal of Applied Physics · 3
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The Anomalous Diffusion of Gallium in Silicon
1971 · Yoshio Nakajima, Shinji Ohkawa · Japanese Journal of Applied Physics · 1
Works count: 20
Citation count: 228
H-index: 10
I10-index: 12
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