Current Limitation Induced by Infrared Light in n-Type GaAs Thin Layers on Semi-Insulating Cr-Doped GaAs
Year: 1982
Type: article
DOI: 10.1143/jjap.21.513
Institution: Fujitsu (Japan)
Language: English
Field: Materials Science
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2072889474
