Work

Reversibility of charge trapping and SILC creation in thin oxides after stress/anneal cycling

Year: 1998

Type: article

Source: Microelectronics Reliability

DOI: 10.1016/s0026-2714(98)00107-3

Authors: P. Riess, R. Kies, G. Ghibaudo, G. Pananakakis, J. Brini

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2008167148

FWCI: 2.838

Cites: 9

Cited by: 19

Related to: 10