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Electrical and Reliability Characteristics of Barrierless Cu-Based Contact for High Dielectric Constant Oxide Thin-Film Device Integration

Year: 2009

Type: article

Source: Journal of The Electrochemical Society

DOI: 10.1149/1.3242360

Authors: C. H. Wu, J. P. Chu, C. H. Lin, S. F. Wang

Institutions: National Taiwan University of Science and Technology, National Taipei University of Technology

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2008304201

FWCI: 0.529

Cites: 15

Cited by: 4

Related to: 10