Work

γ-Ray irradiation effects on 6H-SiC MOSFET

Year: 1999

Type: article

Source: Materials Science and Engineering B

DOI: 10.1016/s0921-5107(98)00560-1

Authors: Takeshi Ohshima, Masahito Yoshikawa, Hisayoshi Itoh, Yasushi Aoki, Isamu Nashiyama

Institution: Japan Atomic Energy Agency

Language: English

Topic: Radiation Effects in Electronics

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2008804474

FWCI: 0.855

Cites: 10

Cited by: 20

Related to: 10