Get started
Author

Hisayoshi Itoh

Observed names: Hisayoshi ITOH, Hisayoshi Itoh Hisayoshi Itoh, ITOH, Hisayoshi, Itoh, Hisayoshi
OpenAlex ID: A5111999306
Analysis of electronic structures of 3d transition metal-doped TiO 2 based on band calculations
2002 · Tsutomu Umebayashi, Tetsuya Yamaki, et al. · Journal of Physics and Chemistry of Solids · 718
Electron spin resonance in electron-irradiated 3C-SiC
1989 · Hisayoshi Itoh, Naohiro Hayakawa, et al. · Journal of Applied Physics · 126
Preparation of anatase and rutile thin films by controlling oxygen partial pressure
2002 · Dani Gustaman Syarif, Atsumi Miyashita, et al. · Applied Surface Science · 97
High-radiation-resistant InGaP, InGaAsP, and InGaAs solar cells for multijuction solar cells
2001 · Nethaji Dharmarasu, Masafumi Yamaguchi, et al. · Applied Physics Letters · 90
Annealing processes of vacancy-type defects in electron-irradiated and as-grown 6H-SiC studied by positron lifetime spectroscopy
1996 · Atsuo Kawasuso, Hisayoshi Itoh, et al. · Journal of Applied Physics · 79
Photoluminescence of radiation induced defects in 3C-SiC epitaxially grown on Si
1995 · Hisayoshi Itoh, Masahito Yoshikawa, et al. · Journal of Applied Physics · 67
Annealing Enhancement Effect by Light Illumination on Proton Irradiated Cu(In,Ga)Se2 Thin-Film Solar Cells
2002 · Shirou Kawakita, Mitsuru Imaizumi, et al. · Japanese Journal of Applied Physics · 61
PDF
Role of the impurities in production rates of radiation-induced defects in silicon materials and solar cells
2001 · Aurangzeb Khan, Masafumi Yamaguchi, et al. · Journal of Applied Physics · 59
Electron spin resonance study of defects in CVD-grown 3C-SiC irradiated with 2MeV protons
1992 · Hisayoshi Itoh, Masahito Yoshikawa, et al. · Journal of Electronic Materials · 58
Effect of gamma-ray irradiation on the characteristics of 6H silicon carbide metal-oxide-semiconductor field effect transistor with hydrogen-annealed gate oxide
2001 · Takeshi Ohshima, Hisayoshi Itoh, et al. · Journal of Applied Physics · 54
Suppressed diffusion of implanted boron in 4H–SiC
1999 · Michael Laube, Gerhard Pensl, et al. · Applied Physics Letters · 52
High-injection carrier dynamics generated by MeV heavy ions impacting high-speed photodetectors
2005 · Jamie Stuart Laird, Toshio Hirao, et al. · Journal of Applied Physics · 44
Effects of C or Si co-implantation on the electrical activation of B atoms implanted in 4H–SiC
1998 · Hisayoshi Itoh, Thomas Troffer, et al. · Applied Physics Letters · 33
Investigation of Positron Moderator Materials for Electron-Linac-Based Slow Positron Beamlines
1998 · Ryoichi Suzuki, Toshiyuki Ohdaira, et al. · Japanese Journal of Applied Physics · 31
PDF
Effects of proton irradiation on n+p InGaP solar cells
2002 · Nethaji Dharmarasu, A. Khan, et al. · Journal of Applied Physics · 29
Preparation of TiO2Nanoparticles by Pulsed Laser Ablation: Ambient Pressure Dependence of Crystallization
2003 · Masakazu Matsubara, Tetsuya Yamaki, et al. · Japanese Journal of Applied Physics · 24
PDF
Majority- and minority-carrier deep level traps in proton-irradiated n+/p-InGaP space solar cells
2002 · Nethaji Dharmarasu, Masafumi Yamaguchi, et al. · Applied Physics Letters · 24
ESR Studies of Defects in p-Type 6H-SiC Irradiated with 3MeV-Electrons
1998 · Dai Bum Cha, Hisayoshi Itoh, et al. · Materials science forum · 24
Vacancy production by 3 MeV electron irradiation in 6H-SiC studied by positron lifetime spectroscopy
1997 · Atsuo Kawasuso, Hisayoshi Itoh, et al. · Journal of Applied Physics · 24
Analysis of Anomalous Degradation of Cu(In,Ga)Se2 Thin-Film Solar Cells Irradiated with Protons
2007 · Shirou Kawakita, Mitsuru Imaizumi, et al. · Japanese Journal of Applied Physics · 21
PDF
Coimplantation Effects on the Electrical Properties of Boron and Aluminium Acceptors in 4H-SiC
1998 · Hisayoshi Itoh, T. Troffer, et al. · Materials science forum · 21
Substitutional nitrogen impurities in pulsed-laser annealed silicon
1984 · Kouichi Murakami, Hisayoshi Itoh, et al. · Applied Physics Letters · 21
PDF
γ-Ray irradiation effects on 6H-SiC MOSFET
1999 · Takeshi Ohshima, Masahito Yoshikawa, et al. · Materials Science and Engineering B · 20
Comparison of Above Bandgap Laser and MeV Ion Induced Single Event Transients in High-Speed Si Photonic Devices
2006 · Jamie S. Laird, Toshio Hirao, et al. · IEEE Transactions on Nuclear Science · 19
Si Substrate Suitable for Radiation-Resistant Space Solar Cells
2006 · Hideharu Matsuura, Hirofumi Iwata, et al. · Japanese Journal of Applied Physics · 19
Works count: 169
Citation count: 2,416
H-index: 21
I10-index: 45
Year
Topic
Type