Photoluminescence of radiation induced defects in 3C-SiC epitaxially grown on Si
Year: 1995
Type: article
Source: Journal of Applied Physics
DOI: 10.1063/1.359008
Institution: Japan Atomic Energy Agency
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2018556317