Work

Surface orientation dependence of growth rate of cubic GaN

Year: 1994

Type: article

Source: Journal of Crystal Growth

DOI: 10.1016/0022-0248(94)91050-2

Authors: Masaki Nagahara, Seiro Miyoshi, Hiroyuki Yaguchi, Kentaro Onabe, Yasuhiro Shiraki, Ryoichi Ito

Institutions: The University of Tokyo, Research Center for Advanced Science and Technology, The University of Tokyo

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2010454408

FWCI: 1.822

Cites: 10

Cited by: 14

Related to: 10