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Seiro Miyoshi

Observed name: Seiro MIYOSHI
Institution: Toshiba (Japan)
OpenAlex ID: A5111995081
Transmission Electron Microscope Observation of Cubic GaN Grown by Metalorganic Vapor Phase Epitaxy with Dimethylhydrazine on (001) GaAs
1994 · Noriyuki Kuwano, Yoshiyuki Nagatomo, et al. · Japanese Journal of Applied Physics · 74
Photoluminescence excitation spectroscopy of GaP1−N alloys: conduction-band-edge formation by nitrogen incorporation
1997 · Hiroyuki Yaguchi, Seiro Miyoshi, et al. · Journal of Crystal Growth · 53
Nitrogen concentration dependence of photoluminescence decay time in GaP1−xNx alloys
1997 · Hiroyuki Yaguchi, Seiro Miyoshi, et al. · Solid-State Electronics · 21
Selective Growth of Cubic GaN in Small Areas on Patterned GaAs(100) Substrates by Metalorganic Vapor Phase Epitaxy
1994 · Masaki Nagahara, Seiro Miyoshi, et al. · Japanese Journal of Applied Physics · 21
Resist materials for 157-nm lithography
2001 · Minoru Toriumi, Seiichi Ishikawa, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 18
Surface orientation dependence of growth rate of cubic GaN
1994 · Masaki Nagahara, Seiro Miyoshi, et al. · Journal of Crystal Growth · 14
Formation of Cubic GaN on (111)B GaAs by Metal-Organic Vapor-Phase Epitaxy with Dimethylhydrazine
1994 · Noriyuki Kuwano, Kenki Kobayashi, et al. · Japanese Journal of Applied Physics · 13
Temperature dependence of photoluminescence of GaP1−N alloys
1998 · Hiroyuki Yaguchi, Goshi Biwa, et al. · Journal of Crystal Growth · 12
Semi-empirical tight-binding calculation of the electronic structure of GaP1−xNx (x = 0.25, 0.5, 0.75) alloys
1997 · Seiro Miyoshi, Kentaro Onabe · Solid-State Electronics · 11
Band Structure of GaP1-xNx(x= 0.25, 0.5, 0.75) Ordered Alloys: Semiempirical Tight-Binding Calculation
1998 · Seiro Miyoshi, Kentaro Onabe · Japanese Journal of Applied Physics · 9
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Sub-45nm resist process using stacked-mask process
2008 · Yuriko Seino, Katsutoshi Kobayashi, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 8
Characterization of fluoropolymers for 157 nm chemically amplified resist
2001 · Toshiro Itani, Minoru Toriumi, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 8
Application of polysilanes for deep-UV antireflective coating
1999 · Yasunobu Onishi, Yasuhiko Sato, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 7
157-nm lithography with high numerical aperture lens for 70-nm technology node
2002 · Toshifumi Suganaga, Noriyoshi Kanda, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 5
Application of a thin-resist process for KrF imaging to 130 nm device fabrication
1999 · Tsukasa Azuma, Kenji Chiba, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 5
Growth Mechanism in the Metalorganic Vapor Phase Epitaxy of Metastable GaP1-xNx Alloys: A Growth Interruption Study
1997 · Seiro Miyoshi, Hiroyuki Yaguchi, et al. · Japanese Journal of Applied Physics · 5
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Frequency doubling of laser diode light in organic channel waveguides
1990 · Takashi Kondo, Naoki Hashizume, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 5
Pattern transfer processes for 157-nm lithography
2002 · Seiro Miyoshi, Takamitsu Furukawa, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 4
Hard Mask Process Using Chemically Amplified 157-nm Resists.
2002 · Takamitsu Furukawa, Seiro Miyoshi, et al. · Journal of Photopolymer Science and Technology · 3
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Polysilane Anti-Reflective Layer for Deep UV Lithography.
1999 · Yasuhiko Sato, Seiro Miyoshi, et al. · Journal of Photopolymer Science and Technology · 3
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157-nm bilayer resist: patterning and etching performance
2003 · Seiro Miyoshi, Takamitsu Furukawa, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 2
Mask defect specification in the spacer patterning process by using a fail-bit-map analysis
2009 · Seiro Miyoshi, Shinji Yamaguchi, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 1
A novel lithography design and verification methodology with patterning failure
2008 · Seiro Miyoshi, Yuuji Kobayashi, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 1
Development of organic bottom antireflective coating for 157-nm lithography
2003 · Shigeo Irie, Masato Shigematsu, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 1
Feasibility study of defects in 157-nm resist process
2003 · Shinya Wakamizu, Yukio Kiba, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 1
Works count: 37
Citation count: 306
H-index: 9
I10-index: 9
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