Work

Investigation of structural properties of high‐rate deposited SiNx films prepared at low temperatures (100–300 °C) by atmospheric‐pressure plasma CVD

Year: 2010

Type: article

Source: Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics

DOI: 10.1002/pssc.200982693

Authors: Y. Yamaguchi, K. Nakamura, H. Ohmi, H. Kakiuchi, K. Yasutake

Institution: The University of Osaka

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: Japan Society for the Promotion of Science

OpenAlex ID: W2010517217

FWCI: 0.49

Cites:

Cited by: 4

Related to: 10