3.9-μm InAsSb/AlAsSb double-heterostructure diode lasers with high output power and improved temperature characteristics
Year: 1994
Type: article
Source: Applied Physics Letters
DOI: 10.1063/1.112779
Authors: H. K. Choi, G. W. Turner, Z. L. Liau
Institutions: MIT Lincoln Laboratory, Massachusetts Institute of Technology
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2010971475