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Z. L. Liau

Observed names: LIAU, ZONG-LONG, Liau, Zong-Long, Z L. Liau, Z-L. Liau, Z. L Liau, Z. L. LIAU, Z. Liau, Z.-L. Liau, Z.L. LIAU, Z.L. Liau, Zong Long Liau, Zong-Long Liau
OpenAlex ID: A5111860353
Semiconductor wafer bonding via liquid capillarity
2000 · Z. L. Liau · Applied Physics Letters · 204
Wafer fusion: A novel technique for optoelectronic device fabrication and monolithic integration
1990 · Z. L. Liau, D. E. Mull · Applied Physics Letters · 186
Influence of atomic mixing and preferential sputtering on depth profiles and interfaces
1979 · Z. L. Liau, B. Y. Tsaur, et al. · Journal of Vacuum Science and Technology · 164
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Sputtering of PtSi
1978 · Z. L. Liau, J. W. Mayer, et al. · Journal of Applied Physics · 157
Ion-beam-induced silicide formation
1979 · B. Y. Tsaur, Z. L. Liau, et al. · Applied Physics Letters · 135
Surface-layer composition changes in sputtered alloys and compounds
1977 · Z. L. Liau, W. L. Brown, et al. · Applied Physics Letters · 134
Microchannel heat sinks for two-dimensional high-power-density diode laser arrays
1989 · L.J. Missaggia, J.N. Walpole, et al. · IEEE Journal of Quantum Electronics · 115
Near-diffraction-limited diode laser arrays by wavelength beam combining
2005 · B. Chann, R. K. Huang, et al. · Optics Letters · 94
Low-threshold InGaAs strained-layer quantum-well lasers (λ=0.98 μm) with GaInP cladding layers and mass-transported buried heterostructure
1992 · Z. L. Liau, S. C. Palmateer, et al. · Applied Physics Letters · 87
A novel technique for GaInAsP/InP buried heterostructure laser fabrication
1982 · Z. L. Liau, J. N. Walpole · Applied Physics Letters · 83
Arrays of InP-based Avalanche Photodiodes for Photon Counting
2007 · Simon Verghese, Pablo I. Hopman, et al. · IEEE Journal of Selected Topics in Quantum Electronics · 78
Surface-emitting GaInAsP/InP laser with low threshold current and high efficiency
1985 · Z. L. Liau, J. N. Walpole · Applied Physics Letters · 76
Limits of composition achievable by ion implantation
1978 · Z. L. Liau, J. W. Mayer · Journal of Vacuum Science and Technology · 75
Ohmic contact formation on InP by pulsed laser photochemical doping
1980 · T. F. Deutsch, D. J. Ehrlich, et al. · Applied Physics Letters · 57
Fabrication, characterization, and analysis of mass-transported GaInAsP/InP buried-heterostructure lasers
1984 · Z. Liau, J. Walpole, et al. · IEEE Journal of Quantum Electronics · 54
Depth dependence of atomic mixing by ion beams
1979 · B. Y. Tsaur, S. Matteson, et al. · Applied Physics Letters · 52
Surface-energy-induced mass-transport phenomenon in annealing of etched compound semiconductor structures: Theoretical modeling and experimental confirmation
1990 · Z. L. Liau, H. J. Zeiger · Journal of Applied Physics · 51
Three-dimensional imaging with arrays of Geiger-mode avalanche photodiodes
2004 · Brian F. Aull, Andrew H. Loomis, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 48
Formation of Si-enriched metastable compounds in the Pt-Si system using ion bombardment and post annealing
1979 · B.Y. Tsaur, Z.L. Liau, et al. · Physics Letters A · 44
Solid-phase epitaxial growth of Si through palladium silicide layers
1975 · C. Canali, S. U. Campisano, et al. · Journal of Applied Physics · 43
3.9-μm InAsSb/AlAsSb double-heterostructure diode lasers with high output power and improved temperature characteristics
1994 · H. K. Choi, G. W. Turner, et al. · Applied Physics Letters · 41
Gallium phosphide microlenses by mass transport
1989 · Z. L. Liau, V. Diadiuk, et al. · Applied Physics Letters · 40
Ion-beam-induced intermixing of surface layers
1979 · B.Y. Tsaur, S.S. Lau, et al. · Thin Solid Films · 40
Optically pumped GaN/Al0.1Ga0.9N double-heterostructure ultraviolet laser
1996 · R. L. Aggarwal, P. A. Maki, et al. · Journal of Applied Physics · 39
Large-numerical-aperture microlens fabrication by one-step etching and mass-transport smoothing
1994 · Z. L. Liau, D. E. Mull, et al. · Applied Physics Letters · 38
Works count: 152
Citation count: 3,092
H-index: 30
I10-index: 62
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