Low-threshold InGaAs strained-layer quantum-well lasers (λ=0.98 μm) with GaInP cladding layers and mass-transported buried heterostructure
Year: 1992
Type: article
Source: Applied Physics Letters
DOI: 10.1063/1.107377
Institutions: MIT Lincoln Laboratory, Massachusetts Institute of Technology
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2026779331