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Highly selective and precisely controlled aluminum etching by Ar/HBr/CH3F/O2 gas chemistry

Year: 2014

Type: article

Source: Japanese Journal of Applied Physics

DOI: 10.7567/jjap.53.03dd01

Authors: Eiji Suzuki, Hiroto Ohtake, Yusuke Ohsawa, Kaushik Kumar, Masaru Sasaki

Institution: Tokyo Electron (Japan)

Language: English

Topic: Low-Pressure Plasma Processing and Diagnostics

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2011453476

FWCI: 0.518

Cites: 33

Cited by: 5

Related to: 10