Lateral encroachment of extrinsic-base dopant in submicrometer bipolar transistors
Year: 1987
Type: article
Source: IEEE Electron Device Letters
Authors: Pong-Fei Lu, G.P. Li, D.D. Tang
Institution: IBM Research - Thomas J. Watson Research Center
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2011491945