Submicrometer FET gate fabrication using resistless and focused ion beam techniques
Year: 1985
Type: article
DOI: 10.1116/1.583247
Authors: David B. Rensch, John Y. Chen, William M. Clark, M. DuChesne Courtney
Institution: HRL Laboratories (United States)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2011820941
